SPN2326 Datasheet, SYNC POWER

* 100V/3A,RDS(ON)=310mΩ@VGS=10V
* High density cell design for extremely low RDS (ON)
* Exceptional on-resistance and maximum DC current capability
* SOT-.

* Powered System
* DC/DC Converter
* Load Switch FEATURES
* 100V/3A,RDS(ON)=310mΩ@VGS=10V
* High de.

The SPN2326 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. The SPN2326 has been designed specifically to improve the overall efficiency of DC/DC converters using.